| 摘要 |
A method for preparing a high-quality garnet single crystal represented by the composition formula Ca<SUB>x</SUB>Nb<SUB>y</SUB>Ga<SUB>z</SUB>O<SUB>12 </SUB>(2.9<x<3.1, 1.6<y<1.8, 3.1<z<3.3) is provided. The single crystal can preferably be used as a single crystal substrate for forming a defect-free single crystal of bismuth-substituted rare-earth iron garnet thereon by liquid-phase epitaxial deposition. The method is to prepare a single crystal by the Czochralski technique, the single crystal having a garnet structure being represented by the composition formula Ca<SUB>x</SUB>Nb<SUB>y</SUB>Ga<SUB>z</SUB>O<SUB>12 </SUB>(2.9<x<3.1, 1.6<y<1.8, 3.1<z<3.3). The crystal is grown at a crystal growth rate g less than or equal to 1.72 mm/h. The crystal is preferably grown in an atmosphere containing oxygen 0.4% or more by volume and below 10.0% by volume. |
