发明名称 METHOD OF FORMING DIELECTRIC LAYERS WITH LOW DIELECTRIC CONSTANTS
摘要 A method (100) of depositing a dielectric material includes providing (101) a substrate with at least one layer over the substrate. The method further includes pre-wetting (102) a top surface of a top layer with a substance, spin coating (103) the solution and forming (104) the dielectric material. The dielectric material is illustratively SiO2 that is relatively porous, and has a relatively low dielectric constant. The pre-wetting results in a reduction in processing costs due to a reduction in lost solution. Moreover, the dielectric layer (209) has an improved thickness uniformity.
申请公布号 KR20060096996(A) 申请公布日期 2006.09.13
申请号 KR20067005506 申请日期 2006.03.20
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 SACHDEV HARBANS;LEUNG GARKAY;RAPP JOHN;MATERA LONGO MARY;SARMA NARA;MEISNER STEPHEN
分类号 H01L21/31;H01L21/208;H01L21/312;H01L21/316 主分类号 H01L21/31
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