发明名称 |
METHOD OF FORMING DIELECTRIC LAYERS WITH LOW DIELECTRIC CONSTANTS |
摘要 |
A method (100) of depositing a dielectric material includes providing (101) a substrate with at least one layer over the substrate. The method further includes pre-wetting (102) a top surface of a top layer with a substance, spin coating (103) the solution and forming (104) the dielectric material. The dielectric material is illustratively SiO2 that is relatively porous, and has a relatively low dielectric constant. The pre-wetting results in a reduction in processing costs due to a reduction in lost solution. Moreover, the dielectric layer (209) has an improved thickness uniformity.
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申请公布号 |
KR20060096996(A) |
申请公布日期 |
2006.09.13 |
申请号 |
KR20067005506 |
申请日期 |
2006.03.20 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
SACHDEV HARBANS;LEUNG GARKAY;RAPP JOHN;MATERA LONGO MARY;SARMA NARA;MEISNER STEPHEN |
分类号 |
H01L21/31;H01L21/208;H01L21/312;H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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