| 摘要 |
The semiconductor device includes a pad electrode (11) formed on a silicon die (10A). A glass substrate (13) is bonded to the top surface of the silicon die. A via hole (17,20) filled with a conductive material is formed through the silicon die and extended from the back surface of the silicon die to the pad electrode. A bump electrode (23) is electrically connected to the filled via hole. An independent claim is also included for a semiconductor device manufacturing method. |
