| 摘要 |
A Schottky barrier diode has a Schottky contact region (11a) formed in an n epitaxial layer (2,3) disposed on a GaAs substrate (1) and an ohmic electrode (8) surrounding the Schottky contact region (11a). The ohmic electrode (8) is disposed directly on an impurity-implanted region (7) formed on the substrate (1). An insulating region (6) is formed through the n epitaxial layer (2,3) so that an anode bonding pad (11b) is isolated form other elements of the device at a cathode voltage. The planar configuration of this device does not include the conventional polyimide layer, and thus has a better high frequency characteristics than conventional devices. <IMAGE> |
