发明名称 MIM CAPACITOR COMPRISING GROUND SHIELD LAYER
摘要 <p>An MIM capacitor includes a substrate, a capacitor part having a structure in which a bottom electrode, a dielectric layer and a top electrode are laminated in order, and a ground shield layer formed between the bottom electrode of the capacitor part and the substrate and connected to a predetermined ground terminal. The ground shield layer may be formed of metal or polysilicon, or a layer doped with impurities having a valence of three or five. Also, the ground shield layer has a predetermined patterned structure. Thus, it is possible to minimize power loss due to the substrate.</p>
申请公布号 KR20060096603(A) 申请公布日期 2006.09.13
申请号 KR20050017258 申请日期 2005.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, SANG YOON;LEE, HEUNG BAE;BANG, HEE MUN;LEE, KWANG DU;JUNG, SUNG JAE
分类号 H01L27/04 主分类号 H01L27/04
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