发明名称 |
MIM CAPACITOR COMPRISING GROUND SHIELD LAYER |
摘要 |
<p>An MIM capacitor includes a substrate, a capacitor part having a structure in which a bottom electrode, a dielectric layer and a top electrode are laminated in order, and a ground shield layer formed between the bottom electrode of the capacitor part and the substrate and connected to a predetermined ground terminal. The ground shield layer may be formed of metal or polysilicon, or a layer doped with impurities having a valence of three or five. Also, the ground shield layer has a predetermined patterned structure. Thus, it is possible to minimize power loss due to the substrate.</p> |
申请公布号 |
KR20060096603(A) |
申请公布日期 |
2006.09.13 |
申请号 |
KR20050017258 |
申请日期 |
2005.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, SANG YOON;LEE, HEUNG BAE;BANG, HEE MUN;LEE, KWANG DU;JUNG, SUNG JAE |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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