| 摘要 |
Silicon carbide power devices are fabricated by implanting p-type dopants into a silicon carbide substrate (100') through an opening in a mask, to form a deep p-type implant (118a, 118b). N-type dopants are implanted into the silicon carbide substrate through the same opening in the mask, to form a shallow n-typc implant (124a, 124b) relative to the p-type implant. Annealing is then performed at temperature and time that is sufficient to laterally diffuse the deep p-type implant to the surface of the silicon carbide substrate surrounding the shallow n-type implant. Accordingly, self-aligned shallow and deep implants may be performed by ion implantation, and a well-controlled channel (136a, 136b) may be formed by the annealing that promotes significant diffusion of the p-type dopant having high diffusivty, while the n-type dopant having low diffusivity remains relatively fixed. Thereby, a p-base may be formed around an n-type source. Lateral and vertical power MOSFETs may be fabricated. |
