| 摘要 |
In a method of manufacturing a compound semiconductor device, individual chip patterns (3) are projected onto a (1 0 0) surface of a GaAs wafer (2) so that the columns and rows of the chip patterns (3) are aligned in a direction slanting by 45 degrees with respect to a �0 1 1� direction of the GaAs wafer (2). The wafer (2) is diced along this slanting direction and chipping along the edges of the individual separated chips is greatly reduced. <IMAGE> |
