发明名称 Nanowire structure and method of manufacturing the same
摘要 Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
申请公布号 EP1700935(A1) 申请公布日期 2006.09.13
申请号 EP20060251195 申请日期 2006.03.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, BYOUNG-LYONG;LEE, EUN-KYUNG
分类号 C30B11/12;B82B3/00;C30B29/60 主分类号 C30B11/12
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