| 发明名称 |
Magnetic tunnel junction structure with amorphous NiFeSiB free layer |
| 摘要 |
A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer. |
| 申请公布号 |
EP1701357(A1) |
申请公布日期 |
2006.09.13 |
| 申请号 |
EP20050020920 |
申请日期 |
2005.09.26 |
| 申请人 |
KOREA UNIVERSITY FOUNDATION |
发明人 |
KIM, YOUNG KEUN;CHUN, BYONG-SUN;RHEE, JANG-ROH;HWANG, JAE-YOUN |
| 分类号 |
G11C11/16;H01F10/32 |
主分类号 |
G11C11/16 |
| 代理机构 |
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