Method for Rounding Top Corner of Shallow Trench Isolation in Semiconductor Device,申请号KR20040115782-传众专利搜索

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发明名称	Method for Rounding Top Corner of Shallow Trench Isolation in Semiconductor Device
摘要
申请公布号	KR100620702(B1)	申请公布日期	2006.09.13
申请号	KR20040115782	申请日期	2004.12.29
申请人		发明人
分类号	H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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