| 摘要 |
<p>An undercoating layer material for lithography, containing polysiloxane and an organotitanium compound having no alkoxy group; and a method for forming a wiring including a step of applying the undercoating layer material onto a substrate and curing to form an undercoating layer and forming a photoresist layer thereon; a step of removing by dry etching the exposed portion of the undercoating layer which is not covered with the photoresist pattern; a step of forming a predetermined wiring pattern using the photoresist pattern and the patterned undercoating layer as masks; and a step of removing the undercoating layer and photoresist pattern remaining on the substrate. The undercoating layer material is advantageous that the storage stability, the form of the lower portion of the resist pattern, and the burying properties are excellent and no voids are found.</p> |
