SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

It is an object of the present invention to manufacture a minute TFT having an LDD region through process with the reduced manufacturing steps, and form a TFT having a structure suitable for each circuit. It is also an object of the present invention to secure an ON current even in a TFT having an LDD region. A hat-shaped gate electrode is formed by forming a two-layer gate electrode in which the gate length of a lower layer of the gate electrode is longer than that of an upper layer of the gate electrode. The hat-shaped gate electrode is formed by etching only the upper layer of the gate electrode by making the use of the resist recess width. In addition, silicide is formed in a contact portion of a wiring and a semiconductor film to lower contact resistance.