HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS,申请号KR20050017420-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS
摘要
申请公布号	KR20060096713(A)	申请公布日期	2006.09.13
申请号	KR20050017420	申请日期	2005.03.02
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	USHAKOV ANDREY;CHOI, JIN HYUK;PARK, JONG ROK
分类号	H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

您可能感兴趣的专利

III-Nitride device with solderable front metal

FinFET with epitaxial source and drain regions and dielectric isolated channel region

Ultra high voltage semiconductor device with electrostatic discharge capabilities

Display device with separation member including steps

Organic light emitting diode display and method for manufacturing the same

Display panel and display device

Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition

Implementing buried FET utilizing drain of finFET as gate of buried FET

Integrated circuits and manufacturing methods thereof

Semiconductor module and method for manufacturing the same

Method of forming molded panel embedded die structure

Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections

Semiconductor device with air gap and method for fabricating the same

Methods of forming a TSV wafer with improved fracture strength

Stress relief structures in package assemblies

Method for manufacturing composite wafers

Dicing sheet and a production method of a semiconductor chip

Article transport vehicle with linkage mechanism

Phase changing on-chip thermal heat sink

Method of forming high-density arrays of nanostructures