发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device includes a semiconductor substrate which has a major surface and a MOS transistor which has a gate and first and second diffusion regions and which is formed on the major surface. The semiconductor device also includes a laminated structure of a SOG layer, wherein the laminated structure is composed of a base layer and a surface layer formed on the base layer and is formed over the MOS transistor and wherein the surface layer is denser than the base layer. |
申请公布号 |
US7105464(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20040862331 |
申请日期 |
2004.06.08 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ASAKAWA KAZUHIKO;SHIMIZU WATARU |
分类号 |
H01L21/4763;H01L21/324;H01L21/44;H01L21/469;H01L21/60;H01L21/768;H01L23/525;H01L29/06 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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