发明名称 |
Field emission RF amplifier |
摘要 |
A field emission RF amplifier. The field emission RF amplifier includes one or more RF amplification units on a substrate and held in a vacuum state and facing a reflection electrode. The RF amplification unit includes a cathode electrode, gate electrode, and an anode electrode all formed on the same substrate. The cathode electrode has a CNT emitter. A DC voltages are applied to the cathode and anode electrodes. An RF signal is input at the cathode electrode and is amplified and output at the anode electrode. Capacitors and inductors are arranged to filter out AC and DC components where needed. An improved amplification of RF signals with high electron mobility and good impedance matching abilities result.
|
申请公布号 |
US7106124(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20050049903 |
申请日期 |
2005.02.04 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
ZOULKARNEEV ANDREI;CHOI JUN-HEE |
分类号 |
H01L29/66;H03K17/92;G09G3/10;H01J17/00;H03F1/02;H03F3/16;H03F3/189;H03F3/19;H03F3/193;H03F3/60 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|