发明名称 |
Semiconductor device with level converter having signal-level shifting block and signal-level determination block |
摘要 |
A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC 1 ) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC 2 ) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2xVDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB 1 ), the level converter circuit (LSC 2 ) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals. |
申请公布号 |
US7106123(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20050117479 |
申请日期 |
2005.04.29 |
申请人 |
RENESAS TECHNOLOGY CORPORATION |
发明人 |
KANNO YUSUKE;MIZUNO HIROYUKI;SAKATA TAKESHI;WATANABE TAKAO |
分类号 |
H03L5/00;G11C5/00;H03K19/0185 |
主分类号 |
H03L5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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