| 发明名称 |
Method of etching semiconductor devices using a hydrogen peroxide-water mixture |
| 摘要 |
The present invention is a method of producing semiconductor devices and an etching liquid with which the titanium nitride film can be removed without thinning of the CoSi layer. A hydrogen peroxide-water mixture is used for removal of the titanium nitride film in the method of producing semiconductor devices by cobalt salicide technology with titanium nitride as the cap film.
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| 申请公布号 |
US7105458(B1) |
申请公布日期 |
2006.09.12 |
| 申请号 |
US20000639163 |
申请日期 |
2000.08.16 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
TAI KAORI |
| 分类号 |
H01L21/28;H01L21/302;H01L21/306;H01L21/308;H01L21/311;H01L21/3213;H01L21/336;H01L21/461;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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