| 摘要 |
An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers ( 6 a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers ( 6 b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer ( 6 c), for which the essentially non-radiating well layers ( 6 a) and the barrier layers ( 6 b) arranged in front form a superlattice.
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