发明名称 Self aligned non-volatile memory cell and process for fabrication
摘要 Floating gate structures are disclosed that have a projection that extends away from the surface of a substrate. This projection may provide the floating gate with increased surface area for coupling the floating gate and the control gate. In one embodiment, the word line extends downwards on each side of the floating gate to shield adjacent floating gates in the same string. In another embodiment, a process for fabricating floating gates with projections is disclosed. The projection may be formed so that it is self-aligned to the rest of the floating gate.
申请公布号 US7105406(B2) 申请公布日期 2006.09.12
申请号 US20030600259 申请日期 2003.06.20
申请人 SANDISK CORPORATION 发明人 LUTZE JEFFREY;PHAM TUAN;CHIEN HENRY;MATAMIS GEORGE
分类号 H01L21/336;H01L21/28;H01L21/8247;H01L27/115;H01L29/423 主分类号 H01L21/336
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