| 摘要 |
There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device ( 20 ) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate ( 21 ) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode ( 27 ) ( 28 ) made of polysilicon formed on a substrate ( 21 ) at its position approximately above the charge transfer section through an insulating film ( 26 ), and an interconnection made of polysilicon and interconnected to the transfer electrode ( 27 ) ( 28 ). At least one of the polysilicon transfer electrode ( 27 )( 28 ) and the interconnection is formed on a polysilicon layer ( 27 a) ( 28 a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device ( 10 ) comprises a buffer layer ( 1 ) containing a metal silicide layer ( 16 ) is formed between the transfer electrodes ( 3 ), ( 4 ) and a shunt interconnection layer ( 7 ) formed of a metal layer.
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