发明名称 |
Nitrogen-free dielectric anti-reflective coating and hardmask |
摘要 |
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
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申请公布号 |
US7105460(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20020193489 |
申请日期 |
2002.07.11 |
申请人 |
APPLIED MATERIALS |
发明人 |
KIM BOK HOEN;RATHI SUDHA;AHN SANG H.;BENCHER CHRISTOPHER D.;WANG YUXIANG MAY;M'SAAD HICHEM;SILVETTI MARIO D. |
分类号 |
H01L21/31;C23C16/40;H01L21/311;H01L21/314;H01L21/316;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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