发明名称 |
Method for peeling off semiconductor element and method for manufacturing semiconductor device |
摘要 |
A method for peeling off a thin film semiconductor element over an insulating surface by using a void, and a method for manufacturing a semiconductor device by transferring the peeled semiconductor element. According to the peeling method of the invention, a first base layer having a plurality of recessed portions is formed over a substrate, and a second base layer having a plurality of voids is formed on the recessed portions of the first base layer. On the second base layer, a third base layer is formed and a semiconductor element is formed thereon. Then, by separating the second base layer at an intersecting surface with the voids, the semiconductor element is peeled off from the substrate.
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申请公布号 |
US7105448(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20040787165 |
申请日期 |
2004.02.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAYAMA TORU;ARAI YASUYUKI |
分类号 |
H01L21/302;H01L21/461;H01L21/68;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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