发明名称 Radiation detector having radiation sensitive semiconductor
摘要 A radiation detector of this invention has an electrically insulating buffer seat disposed on a front surface of a radiation sensitive semiconductor, in a position outside a radiation detection effective area. A common electrode for bias voltage application is formed to cover the buffer seat. A lead wire for bias voltage supply is connected to a lead wire connection area, located on the buffer seat, of the surface of the common electrode. The buffer seat reduces a shock occurring when the lead wire is connected to the common electrode. As a result, the semiconductor and an intermediate layer are protected from damage which would lead to a lowering of performance. The buffer seat is disposed outside the radiation detection effective area. Thus, the buffer seat is provided without impairing the radiation detecting function.
申请公布号 US7105829(B2) 申请公布日期 2006.09.12
申请号 US20040936673 申请日期 2004.09.09
申请人 SHIMADZU CORPORATION 发明人 SATO KENJI;SUZUKI JUNICHI;NAGAFUNE NOBUYA;WATADANI KOJI;KISHIMOTO HIDETOSHI
分类号 G01T1/24;H01L27/14;H01L27/146;H01L31/00;H01L31/04;H01L31/08;H01L31/09;H01L31/115;H04N5/32;H04N5/335;H04N5/369;H04N5/374 主分类号 G01T1/24
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