发明名称 |
Manufacturing method of semiconductor device |
摘要 |
There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
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申请公布号 |
US7105400(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20030673262 |
申请日期 |
2003.09.30 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
IMAI KEITARO;YAMAKAWA KOJI;ITOKAWA HIROSHI;NATORI KATSUAKI;ARISUMI OSAMU;NAKAZAWA KEISUKE;MOON BUM-KI |
分类号 |
H01L21/8234;H01L21/00;H01L21/336;H01L21/8244;H01L21/8246;H01L27/115 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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