发明名称 Photoelectric imaging sensor and method having a metallized plate capacitively coupled to an electron emitting plate
摘要 A photoelectric imaging sensor and method that provide for electronic shuttering and frequency filtering. An exemplary sensor includes a biased conductive frame disposed adjacent to an electron emitting plate that is coupled by way of a reset field effect transistor to ground. A metallized plate is insulated from (capacitively coupled to) the electron emitting plate and is coupled by way of a charge isolation field effect transistor (to ground. Electronic shuttering and frequency filtering in the photoelectric imaging sensor is implemented is as follows. The conductive frame is biased by predetermined amounts to control the surface work function of the electron emitting plate and set the incident light frequency at which photoelectrons are emitted by the electron emitting plate, thus providing for frequency filtering and electronically shuttering of the photoelectric imaging sensor. Electronic shuttering is provided by gating the metallized plate using the charge isolation field effect transistor.
申请公布号 US7105794(B2) 申请公布日期 2006.09.12
申请号 US20040919715 申请日期 2004.08.17
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 BEAN HEATHER N.;ROBINS MARK N.
分类号 H01L27/00 主分类号 H01L27/00
代理机构 代理人
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