发明名称 |
Infrared ray sensor using silicon oxide film as infrared ray absorption layer and method of fabricating the same |
摘要 |
The present invention relates to a pyroelectric infrared ray sensor fabricated by using MEMS processes, wherein an infrared ray absorption layer disposed on the most top portion of the infrared ray sensor assembly is formed with a silicon oxide film (SiO<SUB>2</SUB>) to exhibit an excellent absorption efficiency with respect to the infrared wavelength band of 8 to 12 mm and function as a protective film for a sensor pixel. In addition, an infrared ray absorption layer, support arms and posts are formed in a single body to allow the sensor assembly to be robust and fabricating processes to be remarkably reduced to increase a process yield.
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申请公布号 |
US7105819(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20040788340 |
申请日期 |
2004.03.01 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
RYU SANG OUK;CHO SEONG MOK;KIM KWI DONG;YU BYOUNG GON |
分类号 |
G01J5/00;H01L31/09;G01J5/10;G01J5/34 |
主分类号 |
G01J5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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