发明名称 |
Method for the production of low defect density silicon |
摘要 |
A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G<SUB>0</SUB>, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
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申请公布号 |
US7105050(B2) |
申请公布日期 |
2006.09.12 |
申请号 |
US20050058885 |
申请日期 |
2005.02.16 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
VORONKOV VLADIMIR V.;FALSTER ROBERT J.;BANAN MOHSEN |
分类号 |
C30B15/20;A61K31/427;A61K31/513;A61K31/675;A61K31/7008;A61K31/704;C30B15/00 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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