| 摘要 |
FIELD: power semiconductor microelectronics. ^ SUBSTANCE: newly introduced in central part of semiconductor structure that has substrate, semiconductor material with depleted area in its central part enclosed by depleted area in peripheral part of structure, and relevant current-conducting contacts are recessed components of reverse polarity of conductivity with spherical depleted area whose electric field strength is higher than that of depleted areas in gap between recessed components and in peripheral part of structure. ^ EFFECT: improved power characteristics, enhanced resistance to pulse overcurrents. ^ 7 cl, 1 dwg |
