| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a trench embedding characteristic can be improved when a designing rule is strict, and a manufacturing method thereof. SOLUTION: This method of manufacturing a semiconductor device has a process of forming a trench on a semiconductor substrate, a process of forming a first insulating film on the inner wall of the trench, a process of forming a second insulating film on the bottom surface of the trench by an anisotropic film forming method, and a process of embedding a third insulating film growing faster on the first insulating film than on the second insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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