| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which diffusion of impurity ions into an organic function layer can be prevented without elevating the drive voltage and deterioration in emission efficiency or reliability due to such diffusion can be eliminated, and to provide a light emitting device, a process for fabricating a semiconductor device, and a process for fabricating a light emitting device. SOLUTION: In the organic EL element 110 of an organic EL device 100, an intermediate layer 113b where an organic material exhibiting transportability of hole is doped with dopant exhibiting oxidizability to the organic material is provided between a hole injection layer 113a and an emission layer 113c. Thickness of the intermediate layer 113b is different between an organic EL element 110(R) corresponding to red (R) and organic EL elements 110(G), 110(B) corresponding to green (G) and blue (B), and the concentration of dopant in the intermediate layer 113b is different among the organic EL elements 110(R), 110(G) and 110(B) corresponding to respective colors. COPYRIGHT: (C)2006,JPO&NCIPI
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