发明名称 Gate valve for semiconductor treatment system and vacuum container
摘要 A gate valve ( 20 ) for a semiconductor processing system includes a housing ( 21 ) forming a plurality of passages ( 22 A to 22 D) arrayed in a first direction. The passages respectively have ports ( 23 A to 23 D) facing a first predetermined side in a second direction perpendicular to the first direction. The ports are respectively provided with valve seats ( 25 A to 25 D) at gradually set back positions in the second direction, as being closer to a second predetermined side in the first direction. Valve plates ( 24 A to 24 D) are arrayed in the second direction to open/close the ports. The valve plates are slid by an actuating mechanism ( 30 A to 30 D).
申请公布号 US2006196422(A1) 申请公布日期 2006.09.07
申请号 US20050548446 申请日期 2005.09.09
申请人 TOKYO ELECTRON LIMITED 发明人 HIROKI TSUTOMU
分类号 B65G49/00;C23C16/00;B01J3/00;B01J3/02;C23F1/00;F16K3/02;F16K51/02;H01L21/00;H01L21/02;H01L21/677 主分类号 B65G49/00
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