| 摘要 |
In a plasma processing apparatus for plasma-processing a target object accommodated in a processing chamber, a density of fluorine F is measured while performing a plasma processing by using a processing gas containing O<SUB>2 </SUB>gas and one or more inert gases based on a ratio of an emission intensity of F radicals [F*] to that of the inert gas [inert gas*] ([F*]/[inert gas*]) on a surface of the target object. In a plasma processing method, the target object is etched with a CF-based processing gas by using a resist film as a mask, deposits on an inner wall of the processing chamber is removed by using the processing gas containing at least O<SUB>2 </SUB>gas and one or more inert gases, and the resist film is ashed with another processing gas containing O<SUB>2 </SUB>gas. In the deposit removal step, the endpoint thereof is determined based on the F density measured.
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