| 发明名称 |
Double gate strained-semiconductor-on-insulator device structures |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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| 申请公布号 |
US2006197124(A1) |
申请公布日期 |
2006.09.07 |
| 申请号 |
US20060415706 |
申请日期 |
2006.05.01 |
| 申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
LOCHTEFELD ANTHONY J.;LANGDO THOMAS A.;HAMMOND RICHARD;CURRIE MATTHEW T.;BRAITHWAITE GLYN;FITZGERALD EUGENE A. |
| 分类号 |
H01L21/8234;H01L21/336;H01L21/337;H01L21/762;H01L21/84;H01L27/12;H01L29/76;H01L29/786;H01L31/00 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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