| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition to be used for a semiconductor fabrication process such as an IC, fabrication of a circuit board for a liquid crystal, a thermal head or the like, and other photo-application lithographic processes, and to provide a pattern forming method using the composition, wherein DOF (depth of focus) is improved and elution of the produced acid from the resist film surface to a liquid immersion liquid is reduced during liquid immersion exposure. <P>SOLUTION: The positive resist composition contains a resin having a lactone structure and the solubility in an alkali developing solution increased by the effect of an acid, wherein the resin has a structure which generates an acid by irradiation with active rays or radiation. The composition is used for the pattern forming method. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
