| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of increasing a film making speed while suppressing the enlargement of a power supply and more effectively suppressing unevenness generated in the thickness and quality of a film. <P>SOLUTION: The plasma processing device 1 is provided with an upper electrode 3 capable of retaining a substrate 10, and a lower electrode 4 installed so as to be opposed to the upper electrode 3 and provided with a plurality of projects 4a and recesses 4b formed on a part opposed to the upper electrode 3. Further, the project 4a of the lower electrode 4 is provided with gas supplying ports 4c formed to supply material gas while the recess 4b of the lower electrode 4 is provided with gas suction ports 4e formed to discharge non-reacted gas, negative ion, malignant radical and flakes. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
