NONVOLATILE MEMORY ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory element preparing a gate structure formed on a semiconductor substrate. SOLUTION: The gate structure comprises: a first insulating film 220 on the semiconductor substrate; a storage node 230, formed on the first insulating film, for holding potential; a second insulating film 240 on the storage node; a third insulating film 250 on the second insulating film; and a control gate electrode 260 on the third insulating film. And, at least one dielectric constant of the second insulating film and the third insulating film is greater than that of the first insulating film. COPYRIGHT: (C)2006,JPO&NCIPI