| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor sensor chip allowing improvements in productivity in manufacturing the chip itself and its mounting further effectively. SOLUTION: When a through-hole 27 and a through-hole 34 are formed by etching at the same time, etching is carried out from the reverse surface side of a silicon wafer 32 for the through-hole 27 and from the top surface side of the silicon wafer 32 for the through-hole 34. Consequently, the top surface side of the silicon wafer 32 is plated after the through-hole 27 and through-hole 34 are bored in the different surfaces of the silicon wafer 32. While the through-hole 27 is kept hollow as it is, only the through-hole 34 is filled with a conductor to form a through electrode. COPYRIGHT: (C)2006,JPO&NCIPI
|
