| 发明名称 |
IMPROVED MIM CAPACITOR STRUCTURE AND PROCESS |
| 摘要 |
An improved MIM capacitor structure and method where a selective plating process is used to form the capping layer on the copper capacitor electrodes. The metallic passivation layers prevent copper diffusion and enhance the reliability of the MIM capacitor.
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| 申请公布号 |
US2006197183(A1) |
申请公布日期 |
2006.09.07 |
| 申请号 |
US20050906666 |
申请日期 |
2005.03.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;HSU LOUIS;YANG HAINING |
| 分类号 |
H01L29/00;H01L21/00 |
主分类号 |
H01L29/00 |
| 代理机构 |
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