SEMICONDUCTOR MEMORY DEVICE HAVING LOCAL ETCH STOPPER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a local etch stopper and a method of manufacturing the semiconductor memory device.

SOLUTION: A method of manufacturing a semiconductor memory device comprises: a step of preparing a semiconductor substrate 200, in which a cell region and a core/peripheral region are defined and device isolation films 210 are formed to define active regions 205; a step of forming gate electrode structures in predetermined regions of the semiconductor substrate and of forming source and drain regions in active regions on respective sides of each of the gate electrode structures; a step of forming an interlayer insulation film 235 on the top portion of the resultant structure in the semiconductor substrate and of etching a predetermined portion of the interlayer insulation film to expose the source and drain regions in the cell region; a step of forming self-aligned contact pads 240a and 240b so that they are brought into contact with the exposed source and drain regions; a step of removing a predetermined thickness of the interlayer insulation film and of forming etch stoppers 245a in spaces created by removing the interlayer insulation film in the cell region; and a step of forming top spacers 245b on sidewalls of the gate electrode structure in the core/peripheral region.

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