| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-single crystal solar cell having good curvilinear factor and conversion efficiency as compared with a boron doped p-type thin film, and outstanding cell characteristics, in the non-single crystal solar cell having at least a pin junction in which the lamination of a p-type semiconductor layer 3 which contains a silicon or a germanium as a principal component, a substantially intrinsic i type semiconductor layer 5, and an n-type semiconductor layer 6 are layered, and also to provide its manufacturing method, and its manufacturing apparatus. <P>SOLUTION: At least one p-type semiconductor layer 3 is a delta-doped layer which consists of a gallium doped p-type semiconductor layer 31, and a boron-doped p-type semiconductor layer 32. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
