发明名称 PHOTOELECTRIC CONVERSION FILM, PHOTOELECTRIC CONVERSION ELEMENT, AND PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion film in which a compound susceptible to crystallization is not crystallized when a layer of a compound having a high deposition temperature is provided on the compound susceptible to crystallization. <P>SOLUTION: In the photoelectric conversion film, a layer (intermediate layer) principally comprising a compound having a crystallization temperature higher than that of an organic compound by 20°C-100°C and a deposition temperature higher than that of the organic compound by 30°C-200°C is provided between a layer principally comprising the organic compound having a crystallization temperature of 30°C-200°C and a function layer principally comprising a compound having a crystallization temperature lower than that of the organic compound by 20°C-100°C and a deposition temperature higher than that of the organic compound by 50°C-300°C. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006237351(A) 申请公布日期 2006.09.07
申请号 JP20050050944 申请日期 2005.02.25
申请人 FUJI PHOTO FILM CO LTD 发明人 IDOTA YOSHIO
分类号 H01L31/10;H01L27/146;H01L51/50 主分类号 H01L31/10
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