发明名称 |
PHOTOELECTRIC CONVERSION FILM, PHOTOELECTRIC CONVERSION ELEMENT, AND PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion film in which a compound susceptible to crystallization is not crystallized when a layer of a compound having a high deposition temperature is provided on the compound susceptible to crystallization. <P>SOLUTION: In the photoelectric conversion film, a layer (intermediate layer) principally comprising a compound having a crystallization temperature higher than that of an organic compound by 20°C-100°C and a deposition temperature higher than that of the organic compound by 30°C-200°C is provided between a layer principally comprising the organic compound having a crystallization temperature of 30°C-200°C and a function layer principally comprising a compound having a crystallization temperature lower than that of the organic compound by 20°C-100°C and a deposition temperature higher than that of the organic compound by 50°C-300°C. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2006237351(A) |
申请公布日期 |
2006.09.07 |
申请号 |
JP20050050944 |
申请日期 |
2005.02.25 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
IDOTA YOSHIO |
分类号 |
H01L31/10;H01L27/146;H01L51/50 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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