发明名称 SUBSTRATE TREATMENT EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide substrate treatment equipment inhibiting an effect on a temperature measured value by a radiation thermometer, manufactured at a low cost, and also inhibiting the effect on a substrate by a heat history with a heating. SOLUTION: The substrate treatment equipment has: a susceptor 217 with a placed wafer 200; the radiation thermometer being mounted on one side to the susceptor 217 and detecting the temperature of the wafer 200; and a heating means 280 mounted between the radiation thermometer and the other side. A light-shielding member 282 shielding an emitted light from the heating means 280 is fitted on the surface of the susceptor 217 so as to be superposed on the periphery of the wafer 200 in a non-contact manner. The wafer 200 is supported by a supporting member 291 extended from the susceptor 217. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006237516(A) 申请公布日期 2006.09.07
申请号 JP20050053717 申请日期 2005.02.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 IMAI YOSHINORI
分类号 H01L21/26;H01L21/205;H01L21/683 主分类号 H01L21/26
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