发明名称 MAGNETICALLY ENHANCED CAPACITIVE PLASMA SOURCE FOR IONIZED PHYSICAL VAPOR DEPOSITION
摘要 A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and may be a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.
申请公布号 US2006197457(A1) 申请公布日期 2006.09.07
申请号 US20060381866 申请日期 2006.05.05
申请人 TOKYO ELECTRON LIMITED 发明人 VUKOVIC MIRKO;RUSSELL DERREK A.
分类号 H01J7/24;C23C14/00;H01J37/32;H01J37/34;H05B31/26 主分类号 H01J7/24
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