Highly activated carbon selective epitaxial process for CMOS

摘要

In accordance with the invention there is a method of forming a semiconductor device comprising forming a gate over a substrate, forming a source region and a drain region by doping a first portion and a second portion of active regions adjacent the gate, and forming a first recess in a portion of the source region and a second recess in a portion of the drain region. The method also includes activating the dopants in the source region and the drain region by heating the active regions and depositing a semiconductor material in the first recess and the second recess after activating the dopants in the source region and the drain region.