| 摘要 |
The present invention provides a surface preparation process using adsorbed halogen. The halogen is applied in a gas phase with UV light. The adsorbed halogen is subsequently modified in another gas phase reaction. The halogen may be reacted with water to form a hydroxyl-bearing Si-O monolayer that forms a layer for subsequent metal deposition. In one aspect the halogen layer is reacted with an alkyl or alkoxy of the formula R-OH to form a passivation layer. By replacing hydrogen atom termination with alkoxy (e.g.methoxy termination, -OCH<SUB>3</SUB>). The selective deposition process can be used for passivating and depositing thin metal films on material surfaces composed of any combination of the group consisting of semiconductors, conductors, insulators, and the like.
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