| 摘要 |
A manufacturing method of a semiconductor device, comprising providing a low-relative-dielectric-constant film above a substrate containing at least oxygen and having a relative dielectric constant of 3.3 or more, a conductor being to be buried in the film, performing a plasma processing by discharging a gas containing a noble gas as a main component to the film, the plasma processing being executed while the substrate above which the film is provided is storing in a processing chamber having an inside covered with a material composed of an element except for oxygen and substantially set under an oxygen-free atmosphere, and providing a first insulating film above the low-relative-dielectric-constant film by a plasma CVD method, being made of a material containing at least one of a material containing oxygen and a material containing an element reacting with oxygen, a conductor being to be buried in the first insulating film.
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