| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor wafer having each self-supporting type nano-structure part capable of preventing stictions apt to be generated, and a manufacturing system. <P>SOLUTION: A patterned layer is formed on a semiconductor wafer. An etching plastic is injected into a processing chamber in which the semiconductor wafer is accommodated, and a self-supporting type nano-structure part is exposed on the semiconductor wafer by etching the patterned layer. The etching plastic contains carbon dioxide fluid in a supercritical state or liquid state, and an etching solution. The semiconductor wafer is cleaned by dipping the carbon dioxide fluid in the supercritical state or liquid state into the processing chamber. The semiconductor wafer is dried by discharging the carbon dioxide fluid in the supercritical state or liquid state from the processing chamber. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
