| 摘要 |
PROBLEM TO BE SOLVED: To surely prevent the short circuit of selective epitaxial layers arranged on both sides of an device isolation region, and to improve the electrical characteristics of the selective epitaxial layers. SOLUTION: A semiconductor apparatus has the device isolation region 1, and the selective epitaxial layers 2 formed on both sides of the device isolation region 1. When the selective epitaxial layers 2 are formed on both sides of the device isolation region 1 for working the front end section of the device isolation region 1 in a tapered shape or a shape close to the tapered shape, facets FSs formed on the end faces of the selective epitaxial layers 2 are formed on the sides inner than the side walls of the device isolation region 1, and the substrate surfaces of the selective epitaxial layers 2 are lengthened. Consequently, when impurity ions are implanted to the selective epitaxial layers 2 in a post-process, the quantity of impurity ions implanted at a desired angle is increased, the profile of an impurity-ion region can be set at a desired value, and the characteristics of a transistor are improved. COPYRIGHT: (C)2006,JPO&NCIPI
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