Metallization target optimization method providing enhanced metallization layer uniformity

摘要

A method for forming a microelectronic layer while employing a sputtering method employs a reactor chamber. A sputtering target and a substrate are positioned within the reactor chamber, along with a sputtering target heater at a side of sputtering target opposite the substrate. At least one of: (1) a heater to sputtering target distance; (2) sputtering power; (3) deposition time; and (4) sputtering gas flow rate, is controlled in accord with a pre-determined function of sputtering target lifetime to provide enhanced uniformity of the deposited layer.