Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein,申请号US19590834361-传众专利搜索

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发明名称	Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein
摘要
申请公布号	US3101257(A)	申请公布日期	1963.08.20
申请号	US19590834361	申请日期	1959.08.17
申请人	HAGEN LAWRENCE M;LEVERTON WALTER F	发明人	HAGEN LAWRENCE M.;LEVERTON WALTER F.
分类号	C01B33/02	主分类号	C01B33/02
代理机构		代理人
主权项
地址

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